NDLI: Modeling and simulations of 1 KV/5 A normally-off 4H-SiC VJFET

Content Provider	IEEE Xplore Digital Library
Author	Khalid, M. Riaz, S. Naseem, S.
Copyright Year	2011
Description	Author affiliation: Microelectronics Division/ Centre of Excellence in Solid State Physics, University of the Punjab, Lahore-54590, Pakistan (Khalid, M.; Riaz, S.; Naseem, S.)
Abstract	Silicon carbide (SiC) has proved to be a promising material for the development of high temperature and high power applications because of excellent thermal and physical properties. In this study, 2D numerical simulation is performed using industry based Sentaurus TCAD tools. The aim of this research work is to design a device which provides high performance for power applications. Complete design provides the excellent forward and blocking characteristics. Simulation results show that increasing temperature, improve the forward characteristics and 5 A saturation current at 600 K is observed at V = 3 V. Also, a very low on-resistance is observed at 600 K which is 0.027 mΩ. The design also provides good blocking capability at room temperature which indicates high value of figure of merits (FOM). The calculated values of FOM decrease with increasing temperature and 19.75 MW (300 K) to 0.5 MW (600 K) are observed at V = −2 V. In addition, its high current value and superior FOM makes 4H-SiC VJFET an excellent device that can give better performance for high temperature and high power applications.
Starting Page	233
Ending Page	237
File Size	1174580
Page Count	5
File Format	PDF
ISBN	9781457706547
e-ISBN	9781457706578
DOI	10.1109/INMIC.2011.6151479
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-22
Publisher Place	Pakistan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Numerical models normally-off On-resistance blocking voltage FOM
Content Type	Text
Resource Type	Article

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