NDLI: Preserving Row Buffer Locality for PCM Wear-Leveling under Massive Parallelism

Content Provider	IEEE Xplore Digital Library
Author	Xinning Wang Bin Wang Zhuo Liu Weikuan Yu
Copyright Year	2015
Abstract	Phase Change Memory (PCM) is a promising alternative technology for DRAM because of its advantages in terms of transistor density and energy consumption. It has been exploited to work in concert or alone inside various memory systems to meet the growing bandwidth needs of massive parallelism. PCM memory cells, however, have a common problem of limited write endurance. Various wear-leaving techniques have been employed for uniform distribution of memory writes, typically through address transformation schemes such as randomization to avoid hot writes. Unfortunately, such address transformation can have the undesirable consequence of disrupting the row buffer locality in sequential memory accesses, resulting in the loss of memory performance. Our analysis reveals that this situation is particularly severe under massive parallelism of manycore processors such as GPUs. In this paper, we introduce a combination of two techniques, matrix-based partial randomization and rowbuffer locality-aware rotation, to alleviate the locality disruption of address transformation and preserve the row buffer locality of PCM-based global memory in GPU. Our evaluation results show that, compared to existing techniques, our techniques can adequately preserve the row buffer locality and minimize the loss of memory performance, while achieving similar endurance and better energy efficiency for a variety of GPGPU applications.
Starting Page	198
Ending Page	207
File Size	1026247
Page Count	10
File Format	PDF
ISSN	15267539
e-ISBN	9781467377201
DOI	10.1109/MASCOTS.2015.39
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Graphics processing units Phase change materials Bills of materials Indexes Parallel processing Random access memory Benchmark testing Address Mapping GPU NVM Row Buffer Locality Endurance Wear Leveling
Content Type	Text
Resource Type	Article

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