NDLI: HEMT's and New Devices for High-Speed Applications

Content Provider	IEEE Xplore Digital Library
Author	Fukuta, M. Hirachi, Y.
Copyright Year	1987
Description	Author affiliation: Fujitsu Laboratories Ltd. Atsugi, 10-1 Morinosato-Wakamiya, Atsugi, 243-01 Japan. (Hirachi, Y.) \|\| Fujitsu Limited, 1015 Kamikodanaka, Nakahara-ku Kawasaki-shi, 211 Japan. (Fukuta, M.)
Abstract	This paper describes the state of the art in the research and development of HEMT's and new devices for microwave-frequency and high-speed applications in Japan. Low-noise HEMT's have already been commercial available, and are successfully utilized in the application such as satellite-communications and radio astronomy. A 4.1K HEMT gate array was fabricated, which was the largest scale HEMT logic LSI. This gate array realized a 16 × 16 bit parallel multiplier which exhibited the multiplication-time of 4.1 ns at 300 K. A new functional, resonant-tunneling hot electron transistor (RHET) was demonstrated, which enables us to build an Exclusive-NOR gate using only one transistor. A HBT with a modified collector structure in which electron transport can mostly be confined to ¿-valley of GaAs was developed, and the HBT achieved the maximum fT as high as 105 GHz at a collector current density in the mid 104 A/cm2.
Starting Page	95
Ending Page	101
File Size	7253014
Page Count	7
File Format	PDF
DOI	10.1109/EUMA.1987.333701
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-09-07
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs Logic arrays Electrons Heterojunction bipolar transistors Research and development Microwave devices Radio astronomy Logic devices Large scale integration Resonant tunneling devices
Content Type	Text
Resource Type	Article

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