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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | White, Paul M. Van Rees, Barteld Leonard, Michael F. |
| Copyright Year | 1984 |
| Description | Author affiliation: Raytheon Company, Special Microwave Devices Operation Bearfoot Road, Northborough, Massachusetts 01532 (White, Paul M.; Van Rees, Barteld; Leonard, Michael F.) |
| Abstract | A comparison of the intermodulation distortion performance of FETs fabricated with flat, spike and 1/x3 type profiles showed that they differ most in their response to gate bias. The effect of load impedance is similar in the three cases and is closely related to its effect on gain compression. A statistical comparison of 43 devices confirmed that the spike profile offers a small but distinct linearity improvement over the other types. |
| Starting Page | 821 |
| Ending Page | 826 |
| File Size | 5791540 |
| Page Count | 6 |
| File Format | |
| DOI | 10.1109/EUMA.1984.333451 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1984-09-10 |
| Publisher Place | Belgium |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Impedance Gallium arsenide FETs Linearity Intermodulation distortion Transconductance Buffer layers Fabrication Microwave devices Electromagnetic heating |
| Content Type | Text |
| Resource Type | Article |
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