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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Brand, P. |
| Copyright Year | 1983 |
| Description | Author affiliation: STANDARD ELEKTRIK LORENZ AG, Ostendstr.3, D-7530 Pforzheim, West-Germany (Brand, P.) |
| Abstract | Today GaAs-FETs are able to generate relative high output power at high frequencies and good efficiency. Therefore they displace GUNN- and IMPATT-diodes in many oscillator and amplifier applications. A big disadvantage of oscillating FETs is their high near carrier noise. But in many cases this problem can be solved by using high Q cavities. In this paper the application of FETs in electronic and mechanical tunable low noise oscillators is shown. A comparison between a feedback and a reverse channel oscillator is made. Measurements of realized circuits are presented. Such oscillators have been developed for use in a digital 13 GHz microwave link system with direct FM service channel. |
| Starting Page | 504 |
| Ending Page | 508 |
| File Size | 3791257 |
| Page Count | 5 |
| File Format | |
| DOI | 10.1109/EUMA.1983.333281 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1983-09-03 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide FETs Circuit noise Microwave oscillators Packaging Frequency modulation Tuning Tunable circuits and devices Power generation Feedback |
| Content Type | Text |
| Resource Type | Article |
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