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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Arnold, J. Butlin, R.S. |
| Copyright Year | 1981 |
| Description | Author affiliation: Plessey Research (Caswell) Limited, Towcester, Northants., England. (Butlin, R.S.) |
| Abstract | The use of GaAs MESFETs, based on 0.5μm gate length technologies, is now well established up to 18 GHz. However, system requirements are demanding either lower noise performance and/or higher frequencies. This paper describes the technologies necessary to fabricate devices with 0.3μm gate lengths, together with results of d.c. characterisation, detailed r.f. characterisation to 18 GHz and initial results up to 30 GHz. Noise figures of 1.2 dB, 1.5 dB, and 2.1 dB were obtained at 12, 14 and 18 GHz with associated gains of 12.5 dB, 11 dB and 9 dB. At 28 GHz a noise figure of 4.8 dB with 5 dB associated gain was achieved. The effects of cooling on device noise temperature is investigated. |
| Starting Page | 264 |
| Ending Page | 269 |
| File Size | 5367218 |
| Page Count | 6 |
| File Format | |
| DOI | 10.1109/EUMA.1981.332965 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1981-09-07 |
| Publisher Place | Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Frequency Gallium arsenide MESFETs Etching Metallization Noise figure Conductivity Contact resistance Resists Gain |
| Content Type | Text |
| Resource Type | Article |
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