NDLI: Low flicker noise high linearity direct conversion mixer for K-band applications in a 90 nm CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Ali, M.K. Hamidian, A. Malignaggi, A. Arnous, M.T. Boeck, G.
Copyright Year	2014
Description	Author affiliation: Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany (Ali, M.K.; Hamidian, A.; Malignaggi, A.; Arnous, M.T.; Boeck, G.)
Abstract	A design of a Direct down-conversion mixer is presented. Noise performance and power consumption are the target design issues for this work. The mixer is fabricated in a 90 nm CMOS technology; it converts down a 2 GHz channel bandwidth at around 20 GHz to the neighborhood of zero frequency. New current bleeding network with resonating inductors is presented; it provides most of the DC current to the driver transistors, yet highest possible ohmic path for the ac current to ground. Buffer is designed to isolate the high impedance of the mixer output from the 50 Ω load. Noise figure of the mixer along with the buffer is shown to be 12 dB with a conversion gain of 4 dB and compression point of -12 dBm. The mixer core consumes 4.3 mW of power, while the differential buffer has a power consumption of 6 mW. The total chip size including pads is 0.44×0.72 $mm^{2}.$
Starting Page	1
Ending Page	4
File Size	552766
Page Count	4
File Format	PDF
ISBN	9786176075530
e-ISBN	9788393152520
DOI	10.1109/MIKON.2014.6899982
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-16
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Warsaw University of Technology (WUT)
Subject Keyword	Mixers Inductors Gain 1f noise Transistors Hemorrhaging Capacitance K-band Direct conversion mixer Dynamic current bleeding network (DCN)
Content Type	Text
Resource Type	Article

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