NDLI: High efficiency small size 6 W class AB X-band power amplifier module using a novel MBE GaAs FET

Content Provider	IEEE Xplore Digital Library
Author	Avasarala, M. Day, D.S. Chan, S. Gregory, P. Basset, J.R.
Copyright Year	1988
Description	Author affiliation: Avantek Inc., Santa Clara, CA, USA (Avasarala, M.; Day, D.S.; Chan, S.; Gregory, P.; Basset, J.R.)
Abstract	A high-efficiency, 7.2 mm GaAs power FET is described that uses a novel doping profile grown by molecular-beam epitaxy. This FET has achieved greater than 7-dB gain and 35.3-dBm power operating in class AB mode with a power-added-efficiency (PAE) of 40% at 10.2 GHz. Extremely compact single- and two-stage balanced amplifier modules were developed achieving power, gain, and PAEs of 37.7 dBm, 6.7 dB, and 34.8% for the single stage and 37.7 dBm, 15.1 dB, and 33.1% for the double stage at 1- and 2-dB gain compression points, respectively, across the 9.2-10.2-GHz band with good gain flatness and output return loss. The total two-stage amplifier was realized on a carrier measuring only 0.700 in. by 0.280 in. by using high-dielectric-constant substrates for all the matching circuits. The values for the PAE remained relatively constant with flange temperatures up to 75 degrees C.
Starting Page	843
Ending Page	846
File Size	271380
Page Count	4
File Format	PDF
DOI	10.1109/MWSYM.1988.22164
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-05-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High power amplifiers Gallium arsenide Phased arrays Microwave FETs Substrates Molecular beam epitaxial growth Doping profiles Gain Power amplifiers Temperature
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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