NDLI: Time-Domain Spectrometry of High Frequency Transistors Measured under Transient Bias Conditions

Content Provider	IEEE Xplore Digital Library
Author	Hawkins, R. J.
Copyright Year	1978
Description	Author affiliation: Post Office Research Centre, Martlesham Health, Ipswich, Suffolk, England (Hawkins, R. J.)
Abstract	Time-Domain Spectrometry has been used to measure S-parameters of high frequency power transistors, bipolar and MOS, under pulsed bias conditions to reduce the mean dissipation and hence the rise in temperature of the active device. For the bipolar transistors, \|S2l\| shows a much slower decrease at high currents than conventional measurements made under steady bias. In the case of the MOS device, \|S2l\| approaches a constant value at high currents showing that the fall in magnitude normally observed is due entirely to the increase in device temperature. It is suggested that this method can be applied to measurements under other transient conditions provided that the system response does not change within the sampling window of 10 ns.
Starting Page	493
Ending Page	497
File Size	4733167
Page Count	5
File Format	PDF
DOI	10.1109/EUMA.1978.332552
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1978-09-04
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Time domain analysis Spectroscopy Frequency measurement Pulse measurements Temperature Power measurement Scattering parameters Power transistors Bipolar transistors Current measurement
Content Type	Text
Resource Type	Article

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