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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bourne, P. Arsene-Henry, P. Fellon, P. Pons, D. |
| Copyright Year | 1992 |
| Description | Author affiliation: Thomson Composants Microondes, Orsay, France (Bourne, P.; Arsene-Henry, P.; Fellon, P.) |
| Abstract | Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module. |
| Starting Page | 1613 |
| Ending Page | 1616 |
| File Size | 210696 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780306112 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.1992.188329 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1992-06-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | HEMTs MMICs Low-noise amplifiers Noise figure Frequency Gain Damping Circuits Bonding Wire |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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