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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Qingqing Liang Guofu Niu Cressler, J.D. Taylor, S. Harame, D.L. |
| Copyright Year | 2002 |
| Description | Author affiliation: Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA (Qingqing Liang; Guofu Niu; Cressler, J.D.) |
| Abstract | This work presents a new design methodology for inductively-degenerated cascode low-noise amplifiers using advanced epitaxial-base SiGe HBTs. Noise figure, gain, and IIP3 are calculated using calibrated linear circuit analysis and a Volterra series methodology as a function of the two major design variables: emitter geometry and biasing current. An optimum SiGe HBT LNA design point which balances input impedance match, high IIP3, noise figure, gain, and power consumption is obtained from calculated noise figure, gain, and IIP3 contours as a function of bias current and geometry. Simplified analytical expressions of IIP3, gain, and noise figure are presented to give additional insight. The optimum LNA design point for the 50 GHz SiGe HBT process technology under study yields a 2 GHz LNA with 15.8 dBm IIP3, 18 dB gain, 1.15 dB noise figure, and a |s11| less than -20 dB for a biasing current of 7.5 mA. The calculated results show good agreement with HP Advanced-Design-System simulations. The design tradeoffs illuminated by this optimization methodology are highlighted and discussed. |
| Starting Page | 517 |
| Ending Page | 520 |
| File Size | 353256 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780372395 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2002.1011670 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-06-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Geometry Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Noise figure Design methodology Low-noise amplifiers Linear circuits Circuit analysis Impedance |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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