NDLI: A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects

Content Provider	IEEE Xplore Digital Library
Author	Taeho Kim Kyounghoon Yang
Copyright Year	2002
Description	Author affiliation: Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea (Taeho Kim; Kyounghoon Yang)
Abstract	A new large-signal model of InP/InGaAs single heterojunction bipolar transistors (SHBTs) has been developed which includes self-heating and impact ionization effects. The model is based on the conventional Gummel-Poon large-signal BJT model. The self-heating and impact ionization effects observed from InP-based SRBTs were modeled through a macro modeling approach. In order to take into account the dependence of impact ionization on the applied voltage and thermal effect, a feedback current source and a temperature dependent voltage source were used in the model as a function of junction temperature, I/sub C/ and V/sub CB/. The model implemented in HP-ADS is verified by comparing the simulated and measured data in DC, multi-bias small-signal S-parameters and large-signal microwave power characteristics.
Starting Page	2141
Ending Page	2144
File Size	368538
Page Count	4
File Format	PDF
ISBN	0780372395
ISSN	0149645X
DOI	10.1109/MWSYM.2002.1012294
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Indium gallium arsenide Heterojunction bipolar transistors Impact ionization Voltage Temperature dependence Feedback Power measurement Microwave measurements Scattering parameters
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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