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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Takenaka, I. Ishikura, K. Takahashi, H. Asano, K. Kanamori, M. |
| Copyright Year | 2000 |
| Description | Author affiliation: ULSI Device Dev. Lab., NEC Corp., Shiga, Japan (Takenaka, I.) |
| Abstract | An L/S-band high-power and low-distortion GaAs FET amplifier has been developed. The amplifier employed newly developed GaAs pseudomorphic heterojunction FETs (HJFETs) exhibiting large drain current and small gm3 characteristics. In addition, the output matching circuit was designed to be in short condition for the second harmonic impedance to give the low distortion characteristics. The developed push-pull amplifier demonstrated 51.5 dBm (140 W) output-power with 13 dB linear gain at 2.2 GHz and extremely low IM3 performance of less than -40 dBc at two-tone total output-power of 43 dBm (at Vds=12 V, set Ids=4% Imax). The developed amplifier is suitable for digital cellular base station system applications. |
| Starting Page | 1711 |
| Ending Page | 1714 |
| File Size | 337742 |
| Page Count | 4 |
| File Format | |
| ISBN | 078035687X |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2000.862308 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-06-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Heterojunctions FETs MESFETs Power generation Base stations Impedance matching Circuits Harmonic distortion High power amplifiers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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