NDLI: Design techniques for GaAs MESFET switches

Content Provider	IEEE Xplore Digital Library
Author	Gardiner, G.J. Geen, M.W. Smith, D.C.
Copyright Year	1989
Description	Author affiliation: Plessey Three Five Group Ltd., Towcester, UK (Gardiner, G.J.; Geen, M.W.; Smith, D.C.)
Abstract	A three-port bias-dependent model for a switch FET is presented. The importance of a three-port model is highlighted, and the large-signal behavior of a MESFET switch in its ON and OFF states is discussed. The effect of gate bias resistance and bias potential is illustrated. Simple equations and techniques are presented which enable estimates of power performance of complex switches to be made prior to detailed nonlinear analysis. Specifically, the models provide circuit designs with the ability to estimate large-signal power-handling characteristics of MMIC (monolithic microwave integrated circuit) switch designs, without immediate recourse to complex nonlinear computer-aided design. Expressions which allow 1-dB compression points to be estimated are given and verified by comparison with measurements of two switch FETs. Finally, the isolation performance at large signal levels is discussed.
Starting Page	405
Ending Page	408
File Size	267557
Page Count	4
File Format	PDF
DOI	10.1109/MWSYM.1989.38751
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-06-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MESFETs Switches FETs Integrated circuit modeling MMICs Nonlinear equations Performance analysis Circuit synthesis Microwave integrated circuits
Content Type	Text
Resource Type	Article

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