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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nakaska, J.K. Haslett, J.W. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Calgary Univ., Alta., Canada (Nakaska, J.K.; Haslett, J.W.) |
| Abstract | Frequency synthesis in modern wireless transceivers requires high frequency, and for many circuit architectures, increased tuning range. In this work, a novel large-tuning range injection locked RF division integrated circuit is presented. The fabricated design operates from 6.2 GHz to 11 GHz. A benchmark Colpitts divider was fabricated on the same silicon. At a 10 kHz offset from the carrier, the inductorless divider has a measured phase noise of -112 dBc/Hz and consumes 17.5 mW from a 3.3 V supply, whereas the Colpitts divider has a measured phase noise of -107 dBc/Hz and consumes 11.7 mW from a 3 V supply. The new architecture also reduces the dependence on quality factor of integrated components for LC-resonant structures by utilizing transistor and layout parasitics at the frequencies of interest. The new inductorless injection locked divider has a very flat output power characteristic over the division range. |
| File Size | 650829 |
| File Format | |
| ISBN | 2960055128 |
| DOI | 10.1109/EUMC.2005.1608945 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-10-04 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCIATION |
| Subject Keyword | Silicon germanium Germanium silicon alloys Frequency conversion Frequency synthesizers Noise measurement Phase measurement Phase noise Integrated circuit synthesis Transceivers Circuit optimization |
| Content Type | Text |
| Resource Type | Article |
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