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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Votoropin, S.D. Khan, A.V. |
| Copyright Year | 2008 |
| Description | Author affiliation: JSC "NIIPP", Tomsk (Votoropin, S.D.; Khan, A.V.) |
| Abstract | The construction of device on intervalley electron transfer (IET) effect with increased efficiency is considered in the present report, which is intended for oscillator, amplifier and auto- dyne creation of cm- and mm-range for generation, amplification and conversion of UHF signals. Advantages of the offered construction of the device on intervalley electron transfer are: - much higher reliability level than for any other active solid- state elements (including all types of UHF field-effect-transistors with Shottky barrier (FET SB) and avalanche diodes); - higher level of impedance values than for FET SB and, hence, better possibilities for device matching with UHF path; - much lower phase noise level than for any other solid- state elements (all types of FET SB and IMPATT diodes); - much smaller sizes than for transistor IC on FET SB; - lack of strict requirements to technological equipment used for manufacture the chips of IET devices. |
| Starting Page | 92 |
| Ending Page | 97 |
| File Size | 2295924 |
| Page Count | 6 |
| File Format | |
| ISBN | 9789663351667 |
| DOI | 10.1109/CRMICO.2008.4676304 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-09-08 |
| Publisher Place | Ukraine |
| Access Restriction | Subscribed |
| Rights Holder | CriMiCo (Crimean Microwave Conference) |
| Subject Keyword | Electrons Diodes Oscillators Signal generators Impedance Phase noise FET integrated circuits Integrated circuit noise UHF integrated circuits Manufacturing |
| Content Type | Text |
| Resource Type | Article |
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