NDLI: Physical characterization of ultrathin high k dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Vandervorst, W. Brijs, B. Bender, H. Conard, O.T. Petry, J. Richard, O. Van Elshocht, S. Delabie, A. Caymax, M. De Gendt, S. Cosnier, V. Green, M. Chen, J.
Copyright Year	2003
Description	Author affiliation: IMEC, Leuven, Belgium (Vandervorst, W.)
Abstract	Targeting very thin equivalent oxides (<1 nm) requires the deposition of (very) thin dielectrics onto silicon surfaces with minimal interfacial oxide. Typically, high-k dielectric layers are deposited using ALD or MOCVD with, at present, a prime emphasis on Hf-based high-k dielectrics, either as pure HfO/sub 2/, as silicate or mixed with Al/sub 2/O/sub 3/. In some cases nitrogen is added to improve the high-temperature stability. Depending on the deposition conditions ALD as well as MOCVD show serious deficiencies in terms of film closure and material density for ultra thin (<3 nm) films. Various surface preparation methods and deposition conditions are used to improve the film quality.. Detailed studies on the film growth and its evolution requires the use of many analytical methods such as Rutherford backscattering spectrometry, low energy ion scattering, time-of-flight SIMS, (spectroscopic) ellipsometry and X-ray photoelectron spectroscopy. When trying to correlate the results in terms of film thickness, apparent discrepancies can be observed which relate to nonhomogeneous growth and reduced material density.
Sponsorship	IEEE/Electron Devices Soc. Japanese Soc. Appl. Phys
Starting Page	40
Ending Page	50
File Size	927192
Page Count	11
File Format	PDF
ISBN	0780377478
DOI	10.1109/PPID.2003.1200909
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-04-24
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High K dielectric materials High-K gate dielectrics Spectroscopy MOCVD Silicon Hafnium oxide Nitrogen Stability Backscatter X-ray scattering
Content Type	Text
Resource Type	Article

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