NDLI: Wafer arcing phenomena and resolution through a capacitively coupled low gap plasma reactor

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2002 7th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.02TH8582)

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Wafer arcing phenomena and resolution through a capacitively coupled low gap plasma reactor

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Wafer arcing phenomena and resolution through a capacitively coupled low gap plasma reactor

Content Provider	IEEE Xplore Digital Library
Author	Fischer, A. Pirkle, D. Wu, D. Loewenhardt, P. Tietz, J. Marks, J.
Copyright Year	2002
Description	Author affiliation: Lam Res. Corp., Fremont, CA, USA (Fischer, A.; Pirkle, D.; Wu, D.; Loewenhardt, P.; Tietz, J.; Marks, J.)
Abstract	Electromagnetic simulations have been performed on a hypothetical device structure showing that electric field strengths around large metal structures can be close to electric breakdown, in particular in low-k materials. A plasma reactor design is presented leading to a large window of operation, free of wafer arcing.
Sponsorship	AVS IEEE/Electron Devices Soc. Japanese Soc. Appl. Phys
Starting Page	130
Ending Page	133
File Size	294961
Page Count	4
File Format	PDF
ISBN	0965157776
DOI	10.1109/PPID.2002.1042626
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Inductors Plasma devices Radio frequency Electric breakdown Plasma materials processing Plasma simulation Dielectrics Inorganic materials Thermal stresses Electromagnetic devices
Content Type	Text
Resource Type	Article

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