NDLI: Photoreflectance spectroscopic technique: a new model for estimation of plasma-induced defect density in Si substrate

Content Provider	IEEE Xplore Digital Library
Author	Wada, H. Eriguchi, K. Fujimoto, A. Kanashima, T. Okuyama, M.
Copyright Year	1998
Description	Author affiliation: Dept. of Physical Sci., Osaka Univ., Japan (Wada, H.)
Abstract	In recent years, reactive ion etching (RIE) has been widely used in ULSI process technology. However, the Si surface exposure to plasmas during RIE causes the generation of defects or damage in the Si substrate due to the energetic ion bombardment and etching species penetration. This plasma-induced damage strongly affects ULSI device performance and reliability. Si substrate damage induced by CHF/sub 3/-CF/sub 4/-Ar plasma processing has been characterized by photoreflectance (PR) spectroscopy. Moreover, the damage induced by Ar plasma has been characterized in-situ in the processing chamber. Both of the PR signal intensities decrease with the plasma treatment. The decrease in PR signal intensity is attributed to the decrease in modulation due to the introduction of the charged defects that changes the space charge density of the depletion layer. We propose a new model for the estimation of the defect density induced by plasma exposure. Using this model based on PR spectroscopy, the defect density can be quantitatively calculated.
Starting Page	152
Ending Page	155
File Size	408143
Page Count	4
File Format	PDF
ISBN	0965157725
DOI	10.1109/PPID.1998.725597
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Spectroscopy Plasma applications Plasma devices Plasma materials processing Plasma density Etching Ultra large scale integration Argon Intensity modulation Space charge
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A New Evaluation Technique Of Plasma-induced Si Substrate Damage By Photoreflectance Spectroscopy

Sputtered nickel coverage of the SiO2 nano-step

High aspect ratio Si etching technique and application

Failure analysis methodology for gate oxide breakdown induced by PID

Toward charging free plasma processes: phase space modeling between pulsed plasma and microtrench

Modeling of plasmas for dry etching in ULSI technologies

Reactive ion etching of thick CVD tungsten films

Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

Ultimate top-down etching processes for future nanoscale devices

Photoreflectance spectroscopic technique: a new model for estimation of plasma-induced defect density in Si substrate

Similar Documents

A New Evaluation Technique Of Plasma-induced Si Substrate Damage By Photoreflectance Spectroscopy

Sputtered nickel coverage of the SiO2 nano-step

High aspect ratio Si etching technique and application

Failure analysis methodology for gate oxide breakdown induced by PID

Toward charging free plasma processes: phase space modeling between pulsed plasma and microtrench

Modeling of plasmas for dry etching in ULSI technologies

Reactive ion etching of thick CVD tungsten films

Pulse-time-modulated plasma etching for high performance polysilicon patterning on thin gate oxides

Ultimate top-down etching processes for future nanoscale devices

Photoreflectance spectroscopic technique: a new model for estimation of plasma-induced defect density in Si substrate