NDLI: Magnetorezistive effect of a non-stationary non-symmetric magnetic tunnel junction

Content Provider	IEEE Xplore Digital Library
Author	Abdulkadyrov, D.V. Beletskii, N.N.
Copyright Year	2013
Description	Author affiliation: Usikov Inst. of Radiophys. & Electron., Kharkov, Ukraine (Abdulkadyrov, D.V.; Beletskii, N.N.)
Abstract	In this paper we investigate tunneling of electrons through a non-stationary non-symmetric magnetic tunnel junction (MTJ) in the approximation of small amplitude of a.c. bias voltage. We study the influence of non-symmetry of MTJ potential barrier on the effect of giant tunneling magnetoimpedance. In addition we analyze the effect of potential barrier width and d.c. bias voltage value on the frequency dependence of giant tunneling magnetoimpedance. Magnetic tunnel junctions (MTJs) exhibit giant magnetoresistance at room temperature. Because of this they are widely used for investigating spin-polarized electron transport in magnetic nanostructures and for designing novel spin-dependent nanoelectronic devices Refs. 1-5.
Starting Page	250
Ending Page	252
File Size	600418
Page Count	3
File Format	PDF
e-ISBN	9781479910687
DOI	10.1109/MSMW.2013.6622030
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-23
Publisher Place	Ukraine
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Magnetic tunneling Electric potential Magnetization Junctions Metals Telecommunications
Content Type	Text
Resource Type	Article

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Magnetorezistive effect of a non-stationary non-symmetric magnetic tunnel junction