NDLI: Catastrophic failure of power silicon PN junctions at high temperature induced by the surface leakage reverse current

Content Provider	IEEE Xplore Digital Library
Author	Obreja, V.V.N. Buiu, O. Nuttall, K.I. Codreanu, C. Sung, M.L. Pei, P.
Copyright Year	2004
Description	Author affiliation: Nat. R&D Inst. for Microtechnology, Bucharest, Romania (Obreja, V.V.N.)
Abstract	The operation of commercial power silicon devices, available at this time, is not possible above 175-200/spl deg/C junction temperature, without risk of failure. The surface leakage reverse current component is a source of nonnegligible localized power dissipation at high temperature. An overheating at the junction peripheral surface is possible and the reverse current thermal runaway may lead to definitive material degradation at the junction edge. Typical I-V reverse characteristics from room temperature to above 200/spl deg/C, from available devices on the market, are shown. The presence of the surface current for standard recovery and fast recovery high voltage junctions is outlined.
Starting Page	185
Ending Page	188
File Size	298010
Page Count	4
File Format	PDF
ISBN	0780384547
DOI	10.1109/IPFA.2004.1345587
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-07-08
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Temperature Heat sinks Power dissipation Voltage Failure analysis Surface resistance Thermal resistance Research and development Consumer electronics
Content Type	Text
Resource Type	Article

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Catastrophic failure of power silicon PN junctions at high temperature induced by the surface leakage reverse current