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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Park, J.Y. Lee, H.C. Bu, J.U. |
| Copyright Year | 2004 |
| Abstract | In this paper, fully integrated piezoelectrically actuated RF MEMS switches have been designed, fabricated, and characterized by using silicon bulk micromachining technology for advanced mobile communication systems with multi-bandlmode operatioa The proposed RF MEMS dccontact switches are comprised of four piezoelectric cantilever actuators, a contact metal pad, and a suspended CPW signal transmission line above the silicon substrate. The measured operation de bias voltages are ranged from 2.5 to 3 volts by varying the thickness of the cantilever piezoelectric actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the fabricated RFMEMS switch with a suspended CPW transmission line are 43dB and -0.23dB at a frequency of 2 GHz and an actuation voltage of 3 volts, respectively. It also has escellent RF performance characteristics at ultra-mde frequency bands. The switchlng on/off time of the fabricated switch is 4 psec at rising and 20 psec at falling actuation, respectively. |
| Starting Page | 1437 |
| Ending Page | 1440 |
| File Size | 291541 |
| Page Count | 4 |
| File Format | |
| ISBN | 1580539920 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-10-12 |
| Publisher Place | The Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | European Microwave Assoc. |
| Subject Keyword | Low voltage Radiofrequency microelectromechanical systems Switches Telephone sets Communication switching Silicon Coplanar waveguides Power transmission lines Piezoelectric actuators Substrates |
| Content Type | Text |
| Resource Type | Article |
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