NDLI: Simulation of a two-diode microwave limiter

Content Provider	IEEE Xplore Digital Library
Author	Shnitnikov, A.S. Mikhaylov, S.M.
Copyright Year	2000
Description	Author affiliation: Tech. Univ., Moscow Power Eng. Inst., Russia (Shnitnikov, A.S.; Mikhaylov, S.M.)
Abstract	The power-limiting characteristics for a single-diode limiter and a two-diode module have been investigated using the numerical modeling software ISTOC based on the fundamental semiconductor equation system. A PIN-diode having a 5 /spl mu/m basewidth is shown to operate successfully as a passive limiter at frequencies up to 2 GHz providing an isolation of about 20 dB. At higher frequencies its operation is severely degraded because of the transit-time effect. A new version of a two-diode quasi-active limiter module is shown to be an attractive alternative to conventional solid-state limiter devices. The optimal value for the Schottky-barrier diode capacitance is found. An isolation of 11.5 dB has been demonstrated for the 1.5 cm range. The utilized modeling technique enables analyzing multi-element microwave devices with a complicated interaction between the components in stationary and dynamic regimes. It provides also an effective means for the optimization of device properties.
Starting Page	154
Ending Page	155
File Size	335430
Page Count	2
File Format	PDF
ISBN	9665720481
DOI	10.1109/CRMICO.2000.1255885
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-09-11
Publisher Place	Ukraine
Access Restriction	Subscribed
Rights Holder	CriMiCo
Subject Keyword	Frequency Numerical models Power system modeling Equations Degradation Solid state circuits Semiconductor diodes Schottky diodes Capacitance Microwave devices
Content Type	Text
Resource Type	Article

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