NDLI: Critical issues for Cu(InAl)Se/sub 2/ thin film solar cells

Content Provider	IEEE Xplore Digital Library
Author	Shafarman, W.N. Marsillac, As. Minemoto, T. Paulson, P.D. Birkmire, R.W.
Copyright Year	2003
Description	Author affiliation: Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA (Shafarman, W.N.; Marsillac, As.; Minemoto, T.; Paulson, P.D.; Birkmire, R.W.)
Abstract	Cu(InAl)Se/sub 2/ thin film solar cells have been demonstrated with 16.9% efficiency using an absorber layer with Al/(In+Al)=0.13 giving a bandgap of 1.16 eV. However, the cell efficiency decreased as the Cu(InAl)Se/sub 2/ bandgap increased up to 1.7 eV. A critical development for these cells was the inclusion of a 5 nm thick Ga seed layer to improve the adhesion between the Cu(InAl)Se/sub 2/ and the Mo back contact. In this paper, critical issues for Cu(InAl)Se/sub 2/ thin film solar cells will be discussed, focusing on the film adhesion, and solar cell behavior with increasing bandgap. The effects of different flux-temperature-time profiles used for the elemental evaporation of Cu(InAl)Se/sub 2/ films, and different back contact structures will be characterized with respect to film morphology, structure, and adhesion, and to device behavior for Cu(InAl)Se/sub 2/ films with bandgaps from 1.1 to 1.5 eV. Finally, the prospects for Cu(InAl)Se/sub 2/ as the absorber layer in wide bandgap solar cells will be reviewed.
Starting Page	2869
Ending Page	2873
File Size	412616
Page Count	5
File Format	PDF
ISBN	4990181603
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	PVSEC Advisory Committee
Subject Keyword	Transistors Photovoltaic cells Photonic band gap Optical films Artificial intelligence Adhesives Substrates Lattices Glass Spectroscopy
Content Type	Text
Resource Type	Article

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