NDLI: Impurity growth in single bunch operation of PF

Content Provider	IEEE Xplore Digital Library
Author	Tobiyama, M. Higuchi, A. Mitsuhashi, T. Kasuga, T. Sakanaka, S.
Copyright Year	1995
Description	Author affiliation: Nat. Lab. for High Energy Phys., Tsukuba, Japan (Tobiyama, M.; Higuchi, A.; Mitsuhashi, T.; Kasuga, T.; Sakanaka, S.)
Abstract	Growth of the single bunch impurity was observed in the Photon Factory storage ring. The phenomenon caused by recapture of electrons that are thrown out of main bucket by Touschck effect was analyzed theoretically. Agreement of the observed rate of the impurity growth and the theoretical estimation was fairly well. In order to cure the effect, the RF knockout method was employed. The betatron tune of a bunch depends on the number of electrons in it. If the knockout frequency is adjusted to that corresponds to weak bunches to remove them, the betatron motion of the main bunch is scarcely affected. This method is routinely used in the single bunch operation of Photon Factory.
Starting Page	3300
Ending Page	3302
File Size	291414
Page Count	3
File Format	PDF
ISBN	0780329341
DOI	10.1109/PAC.1995.505861
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impurities Electrons Radio frequency Storage rings Production facilities Synchrotrons Dynamic range Photomultipliers Light scattering Particle scattering
Content Type	Text
Resource Type	Article

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