NDLI: Towards a laser beam induced current test structure for the nondestructive determination of junction depth in HgCdTe photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Redfern, D.A. Fang, W. Musca, C.A. Dell, J.M. Faraone, L.
Copyright Year	2000
Description	Author affiliation: Dept. of Electr. & Electron. Eng., Univ. of Western Australia, Crawley, WA, Australia (Redfern, D.A.; Fang, W.; Musca, C.A.; Dell, J.M.; Faraone, L.)
Abstract	Correct placement of the p-n junction depth of diodes in HgCdTe infrared focal plane arrays is critical for ensuring the highest performance of diodes in the array. To date, most methods of determining the junction depth in HgCdTe have been destructive, based around wet chemical etching of the sample until the n-region has disappeared. In this paper we present some introductory work on the application of laser beam induced current, a non-destructive characterisation technique, to a specially designed junction depth test structure. The test structure has small geometric dimensions, which enables the peak magnitude of the LBIC signal to be sensitive to variations in the depth of the p-n junction.
Starting Page	169
Ending Page	172
File Size	375883
Page Count	4
File Format	PDF
ISBN	0780366980
DOI	10.1109/COMMAD.2000.1022918
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-12-06
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Laser beams Nondestructive testing Photodiodes Semiconductor laser arrays P-n junctions Diodes Wet etching Chemical lasers Laser applications Optical design
Content Type	Text
Resource Type	Article

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Dependence of laser beam induced current on geometry of the junction for HgCdTe photodiodes

Nondestructive determination of p-n junction depth using laser beam induced current and lateral photovoltage measurements

Simulation of laser beam induced current for HgCdTe photodiodes with leakage current

Laser beam induced current for qualitative evaluation of HgCdTe van der Pauw sample uniformity

Junction depth estimation using wet chemical etching for deep junction fabricated by laser doping

Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes

Interpretation of current flow in photodiode structures using laser beam-induced current for characterization and diagnostics

A discrete element model of laser beam induced current (LBIC) due to the lateral photovoltaic effect in open-circuit HgCdTe photodiodes

Laser beam induced current characterisation of HgCdTe processed using plasma techniques

Towards a laser beam induced current test structure for the nondestructive determination of junction depth in HgCdTe photodiodes

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