NDLI: Low-temperature chemical vapour deposited semiconducting nitrides

Content Provider	IEEE Xplore Digital Library
Author	Tansley, T.L.
Copyright Year	1997
Description	Author affiliation: Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia (Tansley, T.L.)
Abstract	Recent work in the semiconducting nitrides AlN, GaN, InN and their ternary derivatives includes the low-temperature enhancement of MOCVD growth through a combination of ultraviolet laser photodissociation of metal precursors and microwave-plasma activated nitrogen radicals. These modifications allow the relative simplicity of low-pressure MOCVD to be successfully shifted to the 500-600/spl deg/C temperature range for GaN, and to room temperature for AlN. Advantages include the availability of short-period multilayers and abrupt heterostructures, free from the cross-diffusion of either ternary constituents or dopants. Thermally fragile substrates now also become available. The binaries grown by this method compare well with conventional MOCVD, room-temperature mobilities up to 400 cm/sup 2/ V/sup -1/ s/sup -1/ are obtained in GaN and as-grown carrier concentrations in the range 10/sup 15/-10/sup 17/ cm/sup -3/ can be controlled via the plasma density. CP/sub 2/Mg is used as counterdopant. Composition of AlGaN and InGaN is determined by precursor ratios, the relationship is linear in the former case but not in the latter. AlN with excellent dielectric properties has been deposited on unstable CdHgTe at 50C. We also mention the roles of microcrystallinity and polytypism in the physical properties of our materials as a function of substrate/buffer combination.
Starting Page	374
Ending Page	381
File Size	577852
Page Count	8
File Format	PDF
ISBN	0780333748
DOI	10.1109/COMMAD.1996.610147
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-12-08
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductivity Gallium nitride MOCVD Plasma temperature Temperature distribution Dielectric substrates Chemical lasers Semiconductor lasers Masers Nitrogen
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]

Au/n-GaN Schottky diode grown on Si(111) by plasma assisted MOCVD

Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

Nitrogen Laser Photoconductive Switching Of Semiconducting Diamond

GaN substrates obtained by nitridation of GaAs

Low-temperature chemical vapour deposited semiconducting nitrides

Similar Documents

Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Growth and characterisation of GaN grown by microwave plasma assisted laser-induced chemical vapour deposition

Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors]

Au/n-GaN Schottky diode grown on Si(111) by plasma assisted MOCVD

Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy

The influence of different substrates on GaN films grown by low temperature laser and plasma enhanced MOCVD

Nitrogen Laser Photoconductive Switching Of Semiconducting Diamond

GaN substrates obtained by nitridation of GaAs

Low-temperature chemical vapour deposited semiconducting nitrides