NDLI: "High frequency" I-V curves for GaAs MESFETs through unique determination of small signal circuit parameters at multiple bias points

Content Provider	IEEE Xplore Digital Library
Author	Meng, C.C. Huang, G.H.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan (Meng, C.C.)
Abstract	"High frequency I-V" can be calculated from integrating the bias dependent r.f. transconductance gm/sub RF/ and channel conductance gds/sub RF/ in the Vgs and Vds voltage plane. To obtain circuit elements from S-parameters fitting produces uncertainty in the circuit elements. An approach to uniquely determine each circuit element from the measured S-parameters is used to obtain a high frequency I-V curve for uniformly-doped MESFETs. No d.c. measurements are used in this approach because a circuit element obtained from d.c. measurement might be different from its r.f. counterpart. The small signal equivalent circuit used has eight bias dependent intrinsic elements and six bias independent extrinsic elements. Thus, gain compression and power saturation caused by the knee voltage and maximum channel current can be accurately modelled through the obtained high frequency I-V curve because the small signal equivalent circuit is valid in both the linear and saturation I-V regions.
Sponsorship	Minstr. Educ.
Starting Page	709
Ending Page	711
File Size	184974
Page Count	3
File Format	PDF
ISBN	0780371380
DOI	10.1109/APMC.2001.985470
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-03
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MESFETs Scattering parameters Equivalent circuits Voltage Frequency measurement FETs Transconductance Knee Integrated circuit measurements
Content Type	Text
Resource Type	Article

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