NDLI: 40 GHz passively mode-locked semiconductor lasers with a novel structure

Content Provider	IEEE Xplore Digital Library
Author	Nishimura, T. Nomura, Y. Akiyama, K. Tomita, N. Isu, T.
Copyright Year	2002
Description	Author affiliation: Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan (Nishimura, T.; Nomura, Y.; Akiyama, K.; Tomita, N.; Isu, T.)
Abstract	We have presented a mode-locked semiconductor laser that operates at a 40 GHz repetition rate and in a 1.55 /spl mu/m band. The mode-locked pulses have a nearly transform-limited time-bandwidth product of 0.38. The phase differences between oscillating modes were calculated and the results account for the transform-limited pulse generation. The reduction of phase difference was achieved by replacing a part of the gain region by passive waveguides in the cavity. The understanding and realization of such mode-locking operations will help us to make stable mode-locking semiconductor lasers that are applicable in long-haul optical communication systems.
Sponsorship	IEEE/Commun. Soc. IEEE/Lasers & Electro-Opt. Soc. Opt. Soc. America
Starting Page	703
Ending Page	705
File Size	291597
Page Count	3
File Format	PDF
ISBN	1557527016
DOI	10.1109/OFC.2002.1036661
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-03-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Optical Society of America
Subject Keyword	Laser mode locking Semiconductor lasers Power generation Fiber lasers Pump lasers Power conversion Laser stability Temperature Fiber gratings Bragg gratings
Content Type	Text
Resource Type	Article

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