NDLI: Ionization damage on ATLAS-SCT front-end electronics considering low dose rate effects

Content Provider	IEEE Xplore Digital Library
Author	Ullan, M. Dorfan, D. Dubbs, T. Grillo, A.A. Spencer, N. Seiden, A. Spieler, H. Gilchriese, M. Lozano, M.
Copyright Year	2002
Description	Author affiliation: Inst. for Particle Phys., California Univ., Santa Cruz, CA, USA (Ullan, M.; Dorfan, D.; Dubbs, T.; Grillo, A.A.; Spencer, N.; Seiden, A.)
Abstract	Low Dose Rate Effects (LDRE) in bipolar technologies complicate the hardness assurance testing for High Energy Physics applications. The damage produced in the ICs in the real experiment can be underestimated if fast irradiations are carried out, while experiments done at the real dose rate are usually unpractical due to the still high total doses involved. In this work, the sensitivity to LDRE of the two bipolar technologies proposed for the ATLAS-SCT experiment in the LHC at CERN is evaluated, its magnitude measured at the total dose of interest for the transistors, and accelerated tests are performed, when necessary, on the actual ICs using high temperature in order to mimic the effects of the low dose rate. One of the proposed technologies (DMILL) has been found free from LDRE thus easing the radiation damage studies performed on it. The other one (CB2) suffers from LDRE. The effects have been measured for the individual devices. Experiments have been carried out to find the temperature that best mimics the LDRE at high dose rates. This temperature has been used in accelerated tests that have been performed on the chip fabricated with this technology in order to obtain the ionization damage that this IC will suffer under the real conditions.
Starting Page	109
Ending Page	113
File Size	254823
Page Count	5
File Format	PDF
ISBN	0780373243
ISSN	10823654
DOI	10.1109/NSSMIC.2001.1008421
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ionization Postal services Testing Bipolar transistors Large Hadron Collider Life estimation Performance evaluation Detectors Temperature sensors Semiconductor device measurement
Content Type	Text
Resource Type	Article

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