NDLI: CdZnTe Schottky diodes for radiation spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Ozsan, M.E. Hossain, E.J. Hossain, M.A.
Copyright Year	2002
Description	Author affiliation: Dept. of Phys., Surrey Univ., Guildford, UK (Ozsan, M.E.; Hossain, E.J.; Hossain, M.A.)
Abstract	Based on raw CdZnTe material provided by eV Products, a division of II-VI Inc., we have established a programme of device fabrication and characterisation. Schottky barrier type devices were fabricated on low grade, 5/spl times/5/spl times/5 mm/sup 3/, CdZnTe (CZT) crystals for radiation spectrometers. Ohmic contacts were applied by alloying indium metal onto CZT surfaces. Vacuum evaporated gold metal provided the rectifying contact. All diodes showed good rectification. Schottky barrier heights were calculated using IN measurements and barrier heights were determined to be 0.99 eV for air cleaved and 1.04 eV for methanol/bromine etched surfaces. Photoresponse measurements revealed bulk band gap value around E/sub g/=1.51 eV corresponding to a Zn molar percentage of 6.3% in the CZT. Free carrier concentration was measured using C-V measurements on Schottky diodes and found to vary between mid 10/sup 11/-10/sup 12/ cm/sup -3/ in the bulk CZT. Radiation spectra were collected with Schottky diodes, at 100 V bias, using an Am-241 source. Schottky diodes prepared on low grade CZT material showed reasonable detector performance with photo peak resolution of 19% and a charge collection efficiency of 31%. Comparison is drawn between Au-CZT-Au and Au-CZT-In devices. It is found that the operation of these detectors is sensitive to chemical surface preparation of the raw CZT material prior to contact application, and to exposed surface passivation.
Starting Page	2276
Ending Page	2280
File Size	209128
Page Count	5
File Format	PDF
ISBN	0780373243
ISSN	10823654
DOI	10.1109/NSSMIC.2001.1009277
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky diodes Spectroscopy Raw materials Schottky barriers Detectors Crystalline materials Fabrication Crystals Ohmic contacts Alloying
Content Type	Text
Resource Type	Article

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