NDLI: The influence of the M-/spl pi/-n structure on CdTe X-ray detector performance

Content Provider	IEEE Xplore Digital Library
Author	Ivanov, V.I. Aleksejava, L.A. Gagliardi, M.-A. Gagliardi, T. Nenonen, S.
Copyright Year	1998
Description	Author affiliation: Baltic Sci. Instrum., Riga, Latvia (Ivanov, V.I.)
Abstract	High energy resolution, good charge collection and low spectrum background have been obtained with M-/spl pi/-n CdTe X-ray detectors. Good spectroscopic performance of the detectors is mainly due to the high quality of the CdTe crystals and the M-/spl pi/-n structure (metal/slightly p-type semiconductor/n-type semiconductor). With the M-/spl pi/-n structure we were able to achieve leakage current densities below 1 nA/mm/sup 2/. Further reduction in the leakage current was achieved by cooling the detectors. Low leakage currents enabled the use of higher bias voltages resulting in better charge collection efficiency which improved the spectral response. In addition, low leakage currents made possible the use of low noise pulsed feedback preamplifiers which further improved the energy resolution. Energy resolutions of 0.42 keV at 5.9 keV, 0.62 keV at 59.6 keV and 2.4 keV at 662 keV have been measured for a detector of size 2.5 mm/spl times/2.5 mm/spl times/0.6 mm and 1.9 keV for a detector of size 4 mm/spl times/4 mm/spl times/1 mm at -30/spl deg/C. The application of pulse shape discrimination improved the energy resolution to 1.5 keV at 662 keV. In this work the performances of CdTe detectors before and after processing the M-/spl pi/-n structure were compared.
Starting Page	530
Ending Page	533
File Size	294270
Page Count	4
File Format	PDF
ISBN	0780342585
ISSN	10823654
DOI	10.1109/NSSMIC.1997.672639
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-11-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	X-ray detectors Energy resolution Leakage current Spectroscopy Crystals Cooling Leak detection Voltage Semiconductor device noise Feedback
Content Type	Text
Resource Type	Article

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The influence of the M-/spl pi/-n structure on CdTe X-ray detector performance

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