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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lemeilleur, F. Glaser, M. Heijne, E.H.M. Jarron, P. Occelli, E. |
| Copyright Year | 1991 |
| Description | Author affiliation: CERN, Geneva, Switzerland (Lemeilleur, F.; Glaser, M.; Heijne, E.H.M.; Jarron, P.; Occelli, E.) |
| Abstract | Ion-implanted silicon pad detectors fabricated on different n-type and p-type silicon wafers with initial resistivities between 2.6 and 12.9 k Omega -cm have been irradiated with neutrons of approximately 1 MeV energy, up to a fluence of 5*10/sup 13/ n cm/sup -2/. The evolution of diode leakage current and capacitance characteristics is presented as a function of the neutron fluence. The reverse diode current increases proportionally to the neutron fluence. There is evidence that the doping of the initial n-type material evolves towards an intrinsic and inverts to an apparent p-type at fluences between 1*10/sup 13/ and 3*10/sup 13/ n cm/sup -2/, depending on the initial silicon resistivity. There is also evidence that p-type material remains of the same conduction type with a slight increase of the acceptor doping with fluence. The signal shape and the charge collection efficiency for incident beta particles have also been measured. |
| Starting Page | 308 |
| Ending Page | 313 |
| File Size | 477708 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780305132 |
| DOI | 10.1109/NSSMIC.1991.258970 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-11-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radiation detectors Silicon radiation detectors Neutrons Conductivity Diodes Doping Shape measurement Leakage current Capacitance-voltage characteristics Conducting materials |
| Content Type | Text |
| Resource Type | Article |
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