NDLI: Properties of melt-grown ZnSe solid-state radiation detectors

Content Provider	IEEE Xplore Digital Library
Author	Eissler, E.E. Lynn, K.G.
Copyright Year	1994
Description	Author affiliation: eV PRODUCTS, Saxonburg, PA, USA (Eissler, E.E.)
Abstract	Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10/spl times/10/spl times/2 mm/sup 3/. Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25/spl deg/C. Pulse height spectra were obtained using /sup 241/Am and /sup 109/Cd at both 25/spl deg/C and 150/spl deg/C with applied bias of 9000 V/cm. Current versus temperature was measured over the temperature range of 30/spl deg/C to 150/spl deg/C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of -70/spl deg/C to 170/spl deg/C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product (/spl mu//spl tau/) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied.
Starting Page	1005
Ending Page	1009
File Size	359460
Page Count	5
File Format	PDF
ISBN	0780325443
DOI	10.1109/NSSMIC.1994.474453
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-30
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc compounds Solid state circuits Radiation detectors Temperature distribution Temperature measurement Current measurement Crystals Pressure measurement Platinum Gold
Content Type	Text
Resource Type	Article

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