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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yuwei Liu Hong Wang Rong Zeng |
| Copyright Year | 2005 |
| Description | Author affiliation: Microelectron. Centre, Nanyang Technol. Univ. (Yuwei Liu; Hong Wang; Rong Zeng) |
| Abstract | A comparative study of the microwave noise performance between InP high electron mobility transistors (HEMTs) with InGaAs channel and InGaAs/InP composite channel is performed. Detailed microwave noise characteristics of InP-based HEMT with single channel and composite channel are presented. A model is carried out to extract the noise parameters and study the thermal noise performance of InP-based HEMT. Characterization of noise performance of InGaAs/InP composite channel HEMTs reveals a different bias dependence of $NF_{min}$ compared to conventional single InGaAs channel devices. The composite channel HEMT shows a lower $NF_{min}$ at high $V_{d}$ with a relatively weak $V_{d}$ dependence. This could be explained under the framework of suppression channel thermal noise due to the electron transfer from InGaAs channel to InP subchannel at high $V_{d}$ |
| Starting Page | 437 |
| Ending Page | 439 |
| File Size | 485073 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780388917 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2005.1517524 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-05-08 |
| Publisher Place | UK |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium gallium arsenide HEMTs MODFETs Indium phosphide Semiconductor device noise Frequency Indium compounds Electron mobility Microwave devices Microwave transistors |
| Content Type | Text |
| Resource Type | Article |
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