NDLI: Optoelectronic logic gate monolithically integrating resonant tunneling diodes and uni-traveling-carrier photo diode

Content Provider	IEEE Xplore Digital Library
Author	Akeyoshi, T. Shimizu, N. Osaka, J. Yamamoto, M. Ishibashi, T. Sano, K. Murata, K. Sano, E.
Copyright Year	1998
Description	Author affiliation: NTT Syst. Electron. Labs., Kanagawa, Japan (Akeyoshi, T.)
Abstract	An InP-based InGaAs/AlAs/InAs resonant tunneling diode (RTD) and a uni-traveling-carrier photodiode (UTC-PD) are monolithically integrated by the regrowth technique to utilize the excellent device characteristics of the RTD and the UTC-PD. The RTD structures are regrown by molecular beam epitaxy on the top of UTC-PD structures grown by metalorganic chemical vapor deposition. The characteristics of the regrown RTDs are almost the same as those of conventional RTDs grown on semi-insulating InP substrates. The UTC-PD provides a sufficient current drivability, shown by the responsivity of 0.27 A/W, along with a high-speed operation demonstrated by the -3-dB bandwidth of 80 GHz, even at the low bias voltage corresponding to the peak voltage of the RTD. A simple circuit configuration of an optoelectronic logic gate with two RTDs and one UTC-PD was fabricated. This optoelectronic logic gate exhibited proper delayed flip-flop operation of 40 gbit/s at 7.75 mW. These results suggest that a circuit using RTDs and a UTC-PD is suitable for the construction of ultrahigh-speed and low-power optoelectronic circuits.
Starting Page	423
Ending Page	426
File Size	404860
Page Count	4
File Format	PDF
ISBN	0780342208
ISSN	10928669
DOI	10.1109/ICIPRM.1998.712493
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-05-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Resonance Circuits Logic devices Indium gallium arsenide Resonant tunneling devices Diodes Photodiodes Molecular beam epitaxial growth Chemical vapor deposition
Content Type	Text
Resource Type	Article

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