NDLI: Selective gate recess RIE etching by CHF/sub 3/+BCl/sub 3/ in InAlAs/InGaAs HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Hung-Chung Kao Li-Shyue Lai Yi-Jen Chan
Copyright Year	1997
Description	Author affiliation: Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan (Hung-Chung Kao)
Abstract	The selective dry etching between InGaAs and InAlAs is an essential process for gate recess in InP-based HEMT fabrication, which means that the top n/sup +/-InGaAs layer must be etched away, and the etching process is terminated at the underline InAlAs Schottky layer. This etching selectivity between two materials can be realized by the reactive ion-etching, which is not always available from the conventional chemical etching approach. In order to achieve this selectivity, the mixture of CHF/sub 3/ and BCl/sub 3/ gases was proposed in this study to replace the role of CCl/sub 2/F/sub 2/, which has an undesirable impact on the environment. This gas mixture approach has been proven in our previous studies that a high selectivity (/spl sim/30) can be obtained without a significant surface damage in AlGaAs/GaAs heterostructures. The C/sub x/F/sub y/ and non-volatile AlF/sub 3/ products generated in the RIE chamber can prevent the further etching in the Al-contented layers. In this study, we explored this concept to investigate the etching process of InAlAs and InGaAs materials by using CHF/sub 3/+BCl/sub 3/ gas mixture, and apply this approach for gate-recess etching in InP HEMT fabrication.
Starting Page	137
Ending Page	140
File Size	250038
Page Count	4
File Format	PDF
ISBN	0780338987
ISSN	10928669
DOI	10.1109/ICIPRM.1997.600073
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium compounds Indium gallium arsenide HEMTs MODFETs Dry etching Radio frequency Fabrication Gases Argon Chemicals
Content Type	Text
Resource Type	Article

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