NDLI: Inverse image problem of designing phase shifting masks in optical lithography

Content Provider	IEEE Xplore Digital Library
Author	Chan, S.H. Lam, E.Y.
Copyright Year	2008
Description	Author affiliation: Dept of Electr. & Electron. Eng, Univ. of Hong Kong, Hong Kong (Lam, E.Y.) \|\| Dept of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA (Chan, S.H.)
Abstract	The continual shrinkage of minimum feature size in integrated circuit (IC) fabrication incurs more and more serious distortion in the optical lithography process, generating circuit patterns deviating from the desired ones. Conventional resolution enhancement techniques (RETs) are facing critical challenges in compensating such increasingly severe distortion. The approach of inverse lithography, which is a branch of mask design methodology to treat the design as an inverse image problem, is adopted in this paper. We apply nonlinear optimization techniques to design masks with minimally distorted output. The output patterns so generated have high contrast and low dose sensitivity. We also propose a dynamic program-based initialization scheme to pre-assign phases to the layout.
Starting Page	1832
Ending Page	1835
File Size	272715
Page Count	4
File Format	PDF
ISBN	9781424417650
ISSN	15224880
DOI	10.1109/ICIP.2008.4712134
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical design Lithography Optical distortion Nonlinear distortion Nonlinear optics Optical sensors Photonic integrated circuits Optical device fabrication Integrated optics Design methodology resolution enhancement techniques Optical lithography inverse problems optical proximity correction
Content Type	Text
Resource Type	Article

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