NDLI: Charge storage in AlGaAs/GaAs heterojunction surface channel CCDs

Content Provider	IEEE Xplore Digital Library
Author	Krikos, A.C. Paz de Araujo, C.A.
Copyright Year	1988
Description	Author affiliation: Microelectron. Res. Labs., Colorado Univ., Colorado Springs, CO, USA (Krikos, A.C.; Paz de Araujo, C.A.)
Abstract	A novel surface channel charge-coupled device (CCD) using an AlGaAs/GaAs heterostructure is presented. Charge storage device characteristics have been determined relative to the unintentionally doped and depleted AlGaAs layer. This layer serves as an effective substitute for the traditional silicon dioxide insulator in a MOS diode. At Q/sub sig/=0 and x<<1, where x is the aluminum mole fraction, the heterostructure has shown a near one-to-one correspondence between the effective gate voltage and the surface potential. It is shown that the material properties of the AlGaAs layer permit better control of the surface potential and charge transfer, thereby offering the possibility of performance superior to current Si-MOS CCDs.
Starting Page	82
Ending Page	88
File Size	355841
Page Count	7
File Format	PDF
DOI	10.1109/REG5.1988.15905
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-03-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunctions Charge coupled devices Silicon compounds Insulation Diodes Aluminum Voltage Material properties Charge transfer
Content Type	Text
Resource Type	Article

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Charge storage in AlGaAs/GaAs heterojunction surface channel CCDs