NDLI: Gate leakage current analysis in READ/WRITE/ IDLE states of a SRAM cell

Content Provider	IEEE Xplore Digital Library
Author	Mukherjee, Valmiki Mohanty, Saraju P. Kougianos, Elias Allawadhi, Rahul Velagapudi, Ramakrishna
Copyright Year	2006
Description	Author affiliation: VLSI Design and CAD Laboratory, P. O. Box 311366, University of North Texas, Denton, 76203, USA (Mukherjee, Valmiki; Mohanty, Saraju P.; Kougianos, Elias; Allawadhi, Rahul; Velagapudi, Ramakrishna)
Abstract	The increasing market demand for ever smaller and application packed portable electronic devices has been fueling the relentless scaling of the CMOS transistor. The ITRS roadmap envisages that high performance CMOS circuits will require ultra-low gate oxide thickness to overcome the effects of shorter channel lengths. However, such devices will be susceptible to a more profound leakage mechanism due to carrier tunneling through the gate oxide. Consequently, the gate oxide tunneling current has emerged as the major component of the leakage power consumption of nanoscale CMOS devices. In the case of an important CMOS circuit like Static RAM (SRAM) there is a high probability for the leakage currents to be manifested with more prominence. SRAMs form a vital component of the CPU cache therefore there is a critical need for analysis, explanation, and characterization of the various tunneling mechanisms SRAMs. This paper explores the gate leakage current scenarios in the READ, WRITE and IDLE states of the SRAM which can make significant contribution to modeling and reduction of gate leakage in SRAM circuits.
Starting Page	196
Ending Page	200
File Size	180947
Page Count	5
File Format	PDF
ISBN	9781424403585
DOI	10.1109/TPSD.2006.5507432
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-04-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Random access memory Circuits Gate leakage Tunneling Very large scale integration Diodes Read-write memory System-on-a-chip Inverters
Content Type	Text
Resource Type	Article

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