NDLI: Improving read performance of Phase Change Memories via Write Cancellation and Write Pausing

Content Provider	IEEE Xplore Digital Library
Author	Qureshi, M.K. Franceschini, M.M. Lastras-Montano, L.A.
Copyright Year	2010
Description	Author affiliation: IBM T. J. Watson Research Center, Yorktown Heights NY (Qureshi, M.K.; Franceschini, M.M.; Lastras-Montano, L.A.)
Abstract	Phase Change Memory (PCM) is emerging as a promising technology to build large-scale main memory systems in a cost-effective manner. A characteristic of PCM is that it has write latency much higher than read latency. A higher write latency can typically be tolerated using buffers. However, once a write request is scheduled for service to a bank, it can still cause increased latency for later arriving read requests to the same bank. We show that for the baseline PCM system with read-priority scheduling, the write requests increase the effective read latency to 2.3x (on average), causing significant performance degradation. To reduce the read latency of PCM devices under such scenarios, we propose adaptive Write Cancellation policies. Such policies can abort the processing of a scheduled write requests if a read request arrives to the same bank within a predetermined period. We also propose Write Pausing, which exploits the iterative write algorithms used in PCM to pause at the end of each write iteration to service any pending reads. For the baseline system, the proposed technique removes 75% of the latency increase incurred by read requests and improves overall system performance by 46% (on average), while requiring negligible hardware and simple extensions to PCM controller.
Starting Page	1
Ending Page	11
File Size	425320
Page Count	11
File Format	PDF
ISBN	9781424456581
ISSN	15300897
e-ISBN	9781424456598
DOI	10.1109/HPCA.2010.5416645
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-01-09
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase change memory Phase change materials Delay Electric resistance Read-write memory System performance Random access memory Switches Crystallization Costs
Content Type	Text
Resource Type	Article

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