NDLI: DCB substrates: solution for high temperature applications

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HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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Thermal models for semiconductor device simulation

The Arrhenius relation for electronics in extreme temperature conditions

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High temperature silicon-on-insulator pressure sensor technology

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A study on the high-temperature subthreshold slope in SOI MOSFETs

Packaging and thermomechanical challenges for high temperature electronics

Die attach and wirebond systems for high temperature electronics

DCB substrates: solution for high temperature applications

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High-temperature characterization of a PD SOI CMOS process with LDMOS and lateral bipolar structures

Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

Long-term stability and thermal cycling of thermocouple contacts to Si up to 350/spl deg/C

Electrical and optical properties of Mg ion implanted GaN p-n junctions

Problems of obtaining and some property of solid solutions (SiC)/sub 1-x/(AlN)/sub x/

The art of high temperature FD-SOI CMOS

Electroless Ni-P and Ni-W-P films as a barrier for thermostimulated diffusion of gold into semiconductor

Effect of irradiation on excess currents in 6H-SiC p-n structures

Interconnections constrained by convention

Reliability physics and electronics design for high operating temperatures

Supply and demand for high temperature electronics

Thermal management and thermomechanical optimization at higher temperatures

Efficient temperature control of micro channel cooled diode laser bars

The use of high temperature electronics in downhole applications

Reliability of commercial plastic encapsulated microelectronics at temperatures from 125/spl deg/C to 300/spl deg/C

Electrical contacts and degradation mechanisms

Relationships between radiation tolerant and high temperature electronics

Perspective on high temperature electronics in Japan

Diffusions barrier, an important layer for high temperature bonds

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Temperature dependence of avalanche breakdown in GaAs p-i-n diodes

The influence of the Hall scattering factor on the determination of activation energies of the nitrogen donors in 4H-SiC epitaxial layers

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1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145)

DCB substrates: solution for high temperature applications

Content Provider	IEEE Xplore Digital Library
Author	Schulz-Harder, J.
Copyright Year	1999
Description	Author affiliation: Curamik Electron. GmbH, Eschenbach, Germany (Schulz-Harder, J.)
Abstract	Summary form only given. DBC (Direct Bonded Copper) substrates have been proved over many years to be the most cost effective and reliable solution for circuits in power electronics. The bases of these substrates are ceramics, either alumina or aluminium nitride. The metallisation consists of copper layers bonded to ceramic at high temperature. DBC differs from thick film metallisation in that the copper layers consist of pure metal with high electric conductivity whereas the DBC process is carried out at temperatures above 1065/spl deg/C; the working temperature of DBC substrates can be up to 900/spl deg/C. DBC substrates are successfully brazed to covar at temperatures of 850/spl deg/C to 900/spl deg/C without affecting their functionality. At temperatures above 500/spl deg/C in hydrogen atmosphere the copper/ceramic interface peel strength is reduced. The copper surface of DBC substrates can be protected against oxidation by plating (Ni+Au) as a standard process. The range thickness of DCB is between 0.2 and 0.7 mm. Standard thicknesses are 0.2 mm and 0.3 mm. The reliability of DBC substrate temperature cycling is dependent on the absolute temperature and the temperature range. For military and automotive specifications the reliability could be improved by reducing the copper thickness at the copper edges by a simple low cost etching process.
File Size	53181
File Format	PDF
ISBN	0780357957
DOI	10.1109/HITEN.1999.827465
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-07-07
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Copper Ceramics Temperature dependence Temperature distribution Bonding Costs Metallization Circuits Power electronics
Content Type	Text
Resource Type	Article

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