NDLI: Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application

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1997 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

FETs with superconducting channels

Proceedings. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.89CH2790-4)

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Low-frequency properties of lattice matched and strained InGaAs/InAlAs HEMTs

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Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics

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High power efficiency X-band GaAlAs/GaAs HBT

Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility

Extension of high f/sub T/ operation bias range for an AlInAs/InGaAs HBT

Doping profile optimization in silicon permeable base transistors for high-frequency, high-voltage operation

Parameter extraction of microwave transistors using tree annealing

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High voltage operation in class B GaAs X-band power MESFETs

Simulation of the variation and sensitivity of GaAs MESFET large signal figures-of-merit due to process, material, parasitic, and bias parameters

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Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.

Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application

Content Provider	IEEE Xplore Digital Library
Author	Lin, S.H. Kim, J.H. Katz, J. Psaltis, D.
Copyright Year	1989
Description	Author affiliation: Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA (Lin, S.H.)
Abstract	A 10*10 array of optical neurons consisting of monolithically integrated DHPTs (double heterojunction phototransistors), DHBTs (double heterojunction bipolar transistors), and LEDs (light-emitting diodes) was fabricated in an AlGaAs/GaAs/AlGaAs double heterostructure. A single DHBT exhibited a current gain as high as 500 with an ideality factor of 1.4. A Darlington transistor pair showed a combined current gain of 4000. The power density of the LED was about 300 W/cm/sup 2/. The integrated structure, however, showed SCR (silicon controlled rectifier) characteristics, which was attributed to the coupling of a parasitic p-n-p transistor to the n-p-n DHBT. This problem was eliminated by first etching a groove in the semi-insulating substrate between the LED and the Darlington transistor pair and then employing metallization to provide proper connection. However, overall gains for the Darlington transistor pair were low, probably due to the leakage currents caused by surface contamination and the Zn diffusion process.
Starting Page	344
Ending Page	352
File Size	506831
Page Count	9
File Format	PDF
DOI	10.1109/CORNEL.1989.79852
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-08-07
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Double heterojunction bipolar transistors Light emitting diodes Optical arrays Thyristors Integrated optics Neurons Phototransistors Etching Metallization
Content Type	Text
Resource Type	Article

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