NDLI: Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs

Content Provider	IEEE Xplore Digital Library
Author	Bolognesi, C.R. Dvorak, M.W. Chow, D.H.
Copyright Year	1997
Description	Author affiliation: Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada (Bolognesi, C.R.)
Abstract	Millimeter-wave heterostructure field-effect transistors (HFETs) incorporate (Ga,In)As channels with increasingly high indium mole fractions to maximize operating frequencies and minimize noise figures. The ever shrinking channel energy gaps render the devices more susceptible to impact ionization effects. Until recently, the effects of impact ionization on the microwave performance of narrow bandgap channel HFETs have largely been ignored. In the present work, we studied the effects of impact ionization and quantum confinement on the microwave characteristics of narrow bandgap InAs-AlSb millimeter-wave HFETs. In the course of this study, we systematically varied the level of impact ionization in HFETs through the use of quantum confinement and bias conditions, and compared the microwave behavior of InAs-AlSb HFETs (with different quantum well widths) to that of conventional GaAs MESFETs also fabricated in our laboratory. The observed trends in the S-parameter data have enabled us to identify the physical effects of impact ionization on the microwave behavior of narrow-gap channel HFETs. We found that the conventional FET equivalent circuit model is inadequate when devices operate under high impact.
Starting Page	115
Ending Page	120
File Size	536803
Page Count	6
File Format	PDF
ISBN	078034135X
DOI	10.1109/EDMO.1997.668583
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-11-25
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impact ionization Potential well HEMTs MODFETs Microwave devices Millimeter wave transistors Photonic band gap Indium Frequency Noise figure
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Impact ionization effects on the microwave performance of InAs channel HFETs: the role of channel quantization

Channel noise in InGaAs/InP composite channel high electron mobility transistors (HEMTs)

High-performance InP-based HEMT millimeter-wave low-noise amplifiers

On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performance

Microwave noise in InP/InGaAs composite channel high electron mobility transistors (HEMTs)

InP-based HEMTs: status and potential

Advanced millimeter-wave InP HEMT MMICs

High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Characteristics of Inaias/ingaasp Quantum-Well Hemts

Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs

Similar Documents

Impact ionization effects on the microwave performance of InAs channel HFETs: the role of channel quantization

Channel noise in InGaAs/InP composite channel high electron mobility transistors (HEMTs)

High-performance InP-based HEMT millimeter-wave low-noise amplifiers

On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performance

Microwave noise in InP/InGaAs composite channel high electron mobility transistors (HEMTs)

InP-based HEMTs: status and potential

Advanced millimeter-wave InP HEMT MMICs

High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Characteristics of Inaias/ingaasp Quantum-Well Hemts

Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs