NDLI: Characterization and reduction of edge leakage current in AlGaAs/GaAs heterojunction bipolar transistors for high frequency applications

Content Provider	IEEE Xplore Digital Library
Author	Bansropun, S. Wood, R.C.
Copyright Year	1999
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Sheffield Univ., UK (Bansropun, S.)
Abstract	N-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter-mesa diameters have been fabricated to investigate the dependence on structural design considerations of the edge leakage current, mainly caused by surface recombination. It is shown that the inclusion of a thinned-emitter edge shoulder structure has a significant effect on the mesa edge leakage current of circular devices. MOVPE and MBE grown heterojunction bipolar transistors, with different base doping levels, were also assessed and the possibility of using a heavily carbon-doped base with doping levels varying from 1/spl times/10/sup 18/ cm/sup -3/ to 5/spl times/10/sup 19/ cm, was examined. It was found that MBE-grown wafers show good transistor action, but poor current gain, whereas MOVPE-grown wafers have both good transistor performance and high current gain. However, a five-fold decrease in base doping level of MBE-grown devices produces an increase in current gain.
Starting Page	93
Ending Page	98
File Size	368182
Page Count	6
File Format	PDF
ISBN	0780355776
DOI	10.1109/HFPSC.1999.809286
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-09-17
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Gallium arsenide Heterojunction bipolar transistors Spontaneous emission Doping Frequency Performance gain Photonic band gap P-n junctions Surface treatment
Content Type	Text
Resource Type	Article

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