NDLI: Analysis of the thermal effects of GaAs FETs under the high-power electromagnetic pulses

Content Provider	IEEE Xplore Digital Library
Author	Jianfeng Xu Wen-Yan Yin Jun-Fa Mao Le-Wei Li Drewniak, J.L.
Copyright Year	2008
Description	Author affiliation: Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai (Jianfeng Xu; Wen-Yan Yin; Jun-Fa Mao; Le-Wei Li; Drewniak, J.L.)
Abstract	In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high- power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by- element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.
Starting Page	1431
Ending Page	1434
File Size	1021592
Page Count	4
File Format	PDF
ISBN	9781424418794
DOI	10.1109/ICMMT.2008.4540713
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-04-21
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromagnetic analysis Gallium arsenide FETs EMP radiation effects Electromagnetic transients Finite element methods Electromagnetic fields Temperature Protection Electric breakdown FEM High-power electromagnetic pulse (HP-EMP) GaAs field-effect transistors (FETs) breakdown
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Transient Thermal Analysis of active device (FETs) for high-power applications

Thermal Transient Response of GaAs FETs Under Intentional Electromagnetic Interference (IEMI)

Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

Experimental investigation and electro-thermal-stress modeling of GaAs and LDMOS FET under conductive electromagnetic pulse (EMP)

Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses

Transient Characterization of Power Divider Response Illuminated by a High-Power EMP

Finite Element Analysis of Magnetic Field Single-Turn Systems

Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

The susceptibility of the microprocessor-based relay of high voltage substations to EMP

Analysis of the thermal effects of GaAs FETs under the high-power electromagnetic pulses

Similar Documents

Transient Thermal Analysis of active device (FETs) for high-power applications

Thermal Transient Response of GaAs FETs Under Intentional Electromagnetic Interference (IEMI)

Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

Experimental investigation and electro-thermal-stress modeling of GaAs and LDMOS FET under conductive electromagnetic pulse (EMP)

Influence of the technology on the destruction effects of semiconductors by impact of EMP and UWB pulses

Transient Characterization of Power Divider Response Illuminated by a High-Power EMP

Finite Element Analysis of Magnetic Field Single-Turn Systems

Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

The susceptibility of the microprocessor-based relay of high voltage substations to EMP

Analysis of the thermal effects of GaAs FETs under the high-power electromagnetic pulses