NDLI: Development of high average power EUV light source by laser produced xenon plasma

Content Provider	IEEE Xplore Digital Library
Author	Nakano, M. Abe, T. Suganuma, T. Imai, Y. Hoshino, H. Ueno, Y. Someya, H. Sournagne, G. Komori, H. Endo, A. Toyoda, K. Horiike, Y.
Copyright Year	2004
Abstract	Summary form only given.Extreme ultraviolet lithography (EUVL) is the main candidate for the next generation lithography (NGL) to be introduced at the 45 nm node or beyond. The EUV light source requirements are very high, however, demanding an output power of 115 W and an energy stability of +-0.3 % (30, 50 pulses moving average). This specification enables a throughput of more than 100 waferhour and a dosage uniform enough for the critical dimension (CD) control. Long lifetime mirror technology is also required to minimize the operation cost. Improvement of the conversion efficiency (CE) from input irradiation laser to output EUV power is an important issue for high average power E W light source development. Laser parameter optimization for target, laser pulse energy, pulse duration and laser spot size are important to increase the conversion efficiency. In order to decrease debris and to reduce the supply of target material, the new target development is required. In this paper, we report about the progress of our high average power LPP E W light source development.
Starting Page	284
Ending Page	284
File Size	143724
Page Count	1
File Format	PDF
ISBN	4990247205
DOI	10.1109/IMNC.2004.245653
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. of Applied, Phys.
Subject Keyword	Light sources Power lasers Plasma sources Ultraviolet sources Lithography Optical pulses Power generation Pump lasers
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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