NDLI: Rapid thermal oxidation of Ge-rich strained layers

Content Provider	IEEE Xplore Digital Library
Author	Das, S. Chakraborty, S. Bhattacharya, S. Bain, M. McCarthy, J. Armstrong, B.M. Gamble, H.S. Dalapati, G.K. Samanta, S.K. Perova, T.S. Moore, R.A. Maiti, C.K.
Copyright Year	2004
Description	Author affiliation: Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India (Das, S.; Chakraborty, S.)
Abstract	In this paper, we report for the first time the electrical properties of ultrathin oxides grown using rapid thermal oxidation (RTO) on strained Ge-rich layers on relaxed-SiGe buffers. Rapid thermal oxidation on strained Ge-rich layer is employed to prevent strain relaxation. Electrical properties of MOS capacitors fabricated using RTO grown oxides directly on strained Ge-rich has been studied in detail using capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics. Interface trap density, fixed oxide charge density, the frequency dispersion and hysteresis effects of the oxide have been determined. From the I-V characteristics, the current conduction mechanism has also been studied. RTO grown oxides show good electrical properties and may find applications in the future generation Ge-CMOS as a gate dielectric.
Starting Page	479
Ending Page	482
File Size	261591
Page Count	4
File Format	PDF
ISBN	0780381661
DOI	10.1109/ICMEL.2004.1314867
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-05-16
Publisher Place	Serbia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Oxidation Capacitive sensors Hafnium Passivation Rough surfaces Surface roughness Capacitance-voltage characteristics Dielectrics CMOS technology Rapid thermal processing
Content Type	Text
Resource Type	Article

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