NDLI: Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors

Content Provider	IEEE Xplore Digital Library
Author	Benabdelmoumene, A. Djezzar, B. Tahi, H. Chenouf, A. Mohamed, G. Kechouane, M.
Copyright Year	2013
Description	Author affiliation: Microelectron. & Nanotechnol. Div., Centre de Dev. des Technol. Av., Baba Hassen, Algeria (Benabdelmoumene, A.; Djezzar, B.; Tahi, H.; Chenouf, A.; Mohamed, G.) \|\| USTHB-Phys. Fac., Univ. des Sci. et de la Technol. Houari-Boumediene, Bab Ezzouar, Algeria (Kechouane, M.)
Abstract	Using measure/stress/measure (MSM) protocol, Negative bias temperature instability (NBTI) has been investigated on P-and N-substrate MOS capacitors through flat band shift evolution. The same protocol on p-MOSFET's transistors, with different channel lengths, has been also examined through threshold voltage shift evolution. The results have shown that P-substrate MOS capacitors are more affected than N-substrate MOS capacitors. We have suggested that the amphoteric nature of interface traps and the positive nature of the oxide traps could explain this result. In addition, the exponent n is higher in N-substrate than in P-substrate capacitors. Higher the degradation is, lower n is. On the other hand, we have shown that P-doped lightly doped drain (LDD) and source/drain regions of p-MOSFET transistors are more affected than the middle of the channel under NBTI stress conditions. These results point out the influence of the Boron doping on the NBTI degradation. Also, this behavior suggests that the generation mechanism in the edge region is different from that in the channel region.
Starting Page	1
Ending Page	4
File Size	570073
Page Count	4
File Format	PDF
e-ISBN	9781479935703
DOI	10.1109/ICM.2013.6734981
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-12-15
Publisher Place	Lebanon
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Capacitors Reliability Voltage measurement Stress MOS capacitors Doping hole trapping P-and N-substrate MOS capacitors NBTI oxide-trap interface-trap
Content Type	Text
Resource Type	Article

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