NDLI: A new method to determine effective channel widths of MOS transistors for VLSI device design

Content Provider	IEEE Xplore Digital Library
Author	Wan, C.-P. Yang, H. Sheu, B.J.
Copyright Year	1990
Description	Author affiliation: Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA (Wan, C.-P.; Yang, H.; Sheu, B.J.)
Abstract	A resistive method for determining the effective channel widths of MOS transistors is presented. In this method, the series resistance is determined using the channel-length characterization method. A practical approximation is used to calculate the series resistance for transistors with different channel widths. The test structure for this method consists of two sets of transistors: one set contains transistors with different channel lengths and the same channel width, and the other set contains transistors with different channel widths and the same channel length. Experimental results show that this method can be used with good accuracy when the series resistance is comparable to the channel resistance. The method is suitable for test structures with transistor channel-length in the submicrometer range.
Starting Page	217
Ending Page	220
File Size	223943
Page Count	4
File Format	PDF
DOI	10.1109/ICMTS.1990.67906
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-03-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Very large scale integration Electrical resistance measurement Electric resistance Testing Length measurement Electric variables Process design Process control Circuits
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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